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ADE-208-170A(Z)
HSK110 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
Rev. 1 Jun. 1994 Features
* Low forward resistance. (rf = 0.9 max) * LLD package is suitable for high density surface mounting and high speed assembly.
1 2nd. band Cathode band
Outline
Cathode band 2
Ordering Information
Type No. Cathode band 2nd.band Package code HSK110 White Blue LLD
1 2nd. band 2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25C)
Item Reverse voltage Forward current Operation temperature Storage temperature Symbol VR IF Topr Tstg Value 35 100 -20 to + 60 -55 to +125 Unit V mA C C
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse voltage Reverse current Capacitance Forward resistance Symbol Min VF VR IR C rf 0.65 35 -- -- -- Typ -- -- -- -- -- Max 1.05 -- 0.1 1.2 0.9 Unit V V A pF Test Condition IF = 1 mA IR = 1 A VR = 25 V VR = 6 V , f = 1 MHz IF = 2 mA , f = 100 MHz
HSK110
10
-2
10 f=1MHz
10 Forward current I F (A)
-4
10-6
Capacitance C (pF) 0.6 0.8
1.0
10
-8
10
-10
10
-12
10 0 0.2 0.4 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage
-1
1.0
10 Reverse voltage VR (V) Fig.2 Capacitance Vs. Reverse voltage
40
10
2
f=100MHz
Forward resistance r f ( )
10
1.0
10
-1
10
-2
10-4
10-3
10-2
10
-1
Forward current I F (A) Fig.3 Forward resistance Vs. Forward current
HSK110
Package Dimensions
Unit: mm
3.5 1.35 0.1
+0.1 -0.2
3.5 1.35 0.1
+0.1 -0.2
1
2
1
2
(0.35typ) 2nd. band (Blue) Cathode band (White)
(0.35typ) 2nd. band (Blue) Cathode band (White)
1 Cathode 2 Anode
( ) : Reference only
HITACHI Code JEDEC Code EIAJ Code Weight (g)
LLD -- -- 0.027

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